This Phase I program examined formation of low dose low-energy SIMOX utilizing the extraction voltage of 65 keV. The dose of 2E17 was found to be within the low dose process window at 65 keV. Samples of high structural and electrical quality were obtained with this dose. The intrinsic breakdown field of 4-6 Mv/cm, silicon defect density on the order of 1E5/sq cm, surface microroughness less than 2A were measured in these samples. The feasibility of the ultra-thin layer SIMOX with the silicon thickness below 90 nm on top of 50 nm thick BOX was demonstrated in high beam current Ibis1000 implanter. Promising material characteristics and significant cost reduction on the side of the equipment and material encourage to further investigate this approach to the formation of the low-dose low-energy SIMOX for fully-depleted Silicon-on-Insulator (SOI).