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Magnetic and transport properties of rare-earth-based half-Heusler phases i2PdBi: 
prospective systems for topological quantum phenomena 



K. D. Kaczorowski^, T. Plackowski^, A. Leithe- Jasper^, and Yu. Grin^ 

^Condensed Matter and Thermal Physics, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA 

^Institute of Low Temperature and Structure Research, 
Polish Academy of Sciences, P.O. Box I4IO, 50-950 Wroclaw, Poland 
^ Max- Planck- Institut fiir Chemische Physik fester Stoffe, Nothnitzer Str. 4-0, 01187 Dresden, Germany 

i?PdBi {R = Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x-ray diffraction, mag- 
netic susceptibility, electrical resistivity, magnetoresistivity, thermoelectric power and Hall effect 
measurements, performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T. 
These ternaries, except diamagnetic YPdBi, exhibit localized magnetism of R^^ ions, and order 
antiferromagnetically at low temperatures (Tat = 2-13 K). The transport measurements revealed 
behavior characteristic of semimetals or narrow-band semiconductors. Both, electrons and holes 
contribute to the conductivity with dominant role of p-type carriers. The Hall effect of ErPdBi 
is strongly temperature and magnetic field dependent, reflecting complex character of the under- 
lying electronic structures with multiple electron and hole bands. i?PdBi, and especially DyPdBi, 
exhibit very good thermoelectric properties with a power factor coefficient PF ranging from 6 to 
20 /iWcm-^K-^ 

PACS numbers: 



I. INTRODUCTION 

The rare-earth (R)-based ternary compounds with the 
composition RTX^ where T denotes a d-electron transi- 
tion metal and X is ap-element, have been studied exten- 
sively during last years ^. Specifically, phases crystalizing 
in a cubic MgAgAs-type of crystal structure which are 
also known under the very unlucky name "half-Heusler" 
phases, are well known because of many different intrigu- 
ing and extraordinary physical properties observed in this 
famil}*^, including half-metallic^ and semiconducting-like 
behavior—.^, giant magnetoresistivity^^^ or heavy fermion 
state^^Tiii For this reason these phases have been named 
"compounds with properties on request" Very re- 
cently, based on first-principle calculations, a topologi- 
cal insulating state has been predicted in heavy metal- 
element containing half-Heusler phasesi^ii^. The topo- 
logical insulator is a new state of quantum matter having 
a full insulating gap in the bulk, but with topologically 
protected gapless surface or edge states on the boundary. 
It has been demonstrated that some compounds from the 
series i?AuPb, i?PtSb, i?PtBi or i?PdBi exhibit a band 
inversion similar to that discovered in HgTei^ii^. Band 
structure calculations show that these phases should pos- 
sess a semimetallic or narrow-band semiconducting state 
and the topological state may be created by applying 
strain (such as crystallographic distortion) or by design- 
ing an appropriate quantum- well structure, similar to 
the case of HgTe. Interestingly, since many of those 
MgAgAs compounds contain a rare-earth element, ad- 
ditional properties ranging from superconductivity to 
magnetism and heavy fermion behavior may be real- 
ized within a topological matrix. These properties can 
open new research directions in realizing the quantized 
anomalous Hall effectpi^ii^, topological superconductors 
with Major ana fermion excitations^ and/or image mag- 



netic monopole effect In this paper we present the 
magnetic and electrical transport properties of a series 
of rare-earth-based i?PdBi phases. The compounds are 
either paramagnetic or antiferromagnetic with Neel tem- 
peratures of several kelvin (except of YPdBi which shows 
diamagnetic behavior) due to well localized 4/ electrons. 
The transport measurements revealed semimetallic be- 
havior with likely dominance of p- type carriers. The elec- 
tronic structure has complex character with the presence 
of multiple electron and hole bands. Moreover, this fam- 
ily of compounds seems to possess very good thermoelec- 
trical parameters, prospective for practical applications. 



II. EXPERIMENTAL DETAILS 

Polycrystalline samples of ErPdBi, HoPdBi, GdPdBi, 
YPdBi, DyPdBi and NpPdBi were prepared by arc- 
melting the constituents {RE: 99.9 %wt, Pd: 99.999 
%wt, Sb: 99.999 %wt) under ultra pure argon atmo- 
sphere. Since additional heat treatment led to multi- 
phase products, the as-cast samples were used for physi- 
cal measurements. The quality of the obtained materials 
was checked at 300 K by powder x-ray diffraction (Huber 
Guinier G670 image plate camera with CuKai radiation, 
A = 1.5406 A, and silicon as an internal standard, a = 
5.43119 A), optical metallography (Zeiss Axioplan 2 op- 
tical microscope with a CCD camera) and EDX analysis 
(Philips XL30 scanning electron microscope with inte- 
grated EDXS system and S-UTW-Si-(Li) detector). Ah 
these studies have shown that the samples studied were 
single phase with a cubic structure of the MgAgAs-type 
(space group F43m). This crystal structure is shown 
in Fig. 1, together with a unit cell adopted by so-called 
Heusler phases (MnCu2Al-type; space group Fm3m). 
The lattice parameters obtained from the x-ray diffrac- 



2 



(a) (b) 




tion data are: a = 6.5952, 6.6012, 6.6343, 6.6391, 6.6906 
and 6.7257 A for ErPdBi, HoPdBi, DyPdBi, YPdBi, 
GdPdBi and NdPdBi, respectively. The derived val- 
ues are in a good agreement with those given in the 
literature^^. 

Magnetization measurements were carried out in the 
temperature range 1.7-300 K and in magnetic fields up 
to 5 T using a Quantum Design MPMS-5 magnetometer. 
The electrical resistivity was measured from 4 to 300 K 
by a standard four-point DC technique. The Hall effect 
measurements were performed in the temperature range 
1.5-300 K and in applied fields up to 12 T (Oxford In- 
struments TESLATRON). The thermoelectric power was 
studied from 6 to 300 K, employing a home-built setup 
using pure copper as a reference material. 



III. RESULTS AND DISCUSSION 

The magnetic measurements revealed that HoPdBi, 
DyPdBi, GdPdBi and NdPdBi order antiferromagneti- 
cally at 2, 3.5, 13 and 4 K, respectively, while ErPdBi 
remains paramagnetic down to the lowest temperature 
studied (see Fig. 2a). In wide temperature ranges the 
X~^(T) exhibit linear temperature dependence. They 
may be well described by the Curie- Weiss law and the 
effective magnetic moments jj^b being close to those 
expected for free R^^ ions within Russell-Saunders 
coupling scenario, = g[J{J -\- 1)]^^^- This indicates 

good localization of the magnetic moments on the 
rare-earth atoms. Moreover, the obtained values of 
the paramagnetic Curie temperature are small and 
negative, consistent with the type of magnetic ordering 
in these systems. As the only exception, YPdBi, which 
does not contain 4/ electrons, shows a diamagnetic 
behavior (see Fig. 2b) that may refiect the formation 
of a time-reversal-invariant spin-orbit ground state. It 
is worth to recall that it is one of the conditions for 
realizing a Z2 = -1 topological insulating state 

The temperature dependencies of the electrical resis- 
tivity of the i?PdBi phases are shown in Fig. 3. In gen- 
eral, the magnitude and the temperature variations of 




-1.0 



1 2 3 4 5 
MoH [T] 



50 



100 



150 

T[K] 



200 



250 



300 



FIG. 2: (color online) (a) Low temperature dependencies of 
the magnetic susceptibility of i?PdBi compounds. Arrows 
mark the antiferromagnetic phase transition, (d) Tempera- 
ture dependence of the magnetic susceptibility of YPdBi. In- 
set: magnetic field variation of the magnetization in YPdBi 
taken at 30 and 300 K with increasing (solid symbols) and 
decreasing (empty symbols) field. 



the resistivity are characteristic of semimetals or narrow- 
gap semiconductors^^. In the case of ErPdBi, GdPdBi, 
NdPdBi and DyPdBi, the p{T) exhibits two different 
regimes. At high temperatures the electrical resistivity 
displays a semiconducting-like character {dp/dT < 0), 
signaling carrier excitations over a small energy gap 
Eg near the Fermi level. This behavior is followed at 
lower temperatures by a metallic-like dependence of p{T) 
{dp/dT > 0). In general, the observed behavior is remi- 
niscent of those typical for doped semiconductors where, 
due to atomic disorder, defects and/or wrong stoichiom- 
etry some donor or acceptor levels are present, lead- 
ing to metallic-like p{T). In order to account for this 
rather complex temperature behavior a simple model of 
the electronic band structure in narrow gap semicon- 
ductors may be used (see Refs.6.20.22.23). Recently, 
this model has been successfully applied to describe 
the temperature dependence of the resistivity in some 
filled skutterudites^^ as well as in compounds ErPdSb^, 
HoPdSb^^ and DyPdBi^^. In this approach one consid- 
ers two rectangular bands of height separated by an 



3 



energy gap Eg, and the Fermi level situated just below 
the gap. In order to describe the metallic conductivity 
at low temperatures, the presence of some temperature- 
independent amount of carriers no is assumed. Thus the 
total number of carriers can be expressed as 



n(T) = no + ^ne{T)nh{T) 



(1) 



where the concentrations of electrons ne(T) and holes 
TihiT) are given by 



ne(T) = -NEg + NkBTln2 



(2) 



(a) 

1.0 



o 

a 



0.9 



0.8 



0.6 
0.5 



ErPdBi 



ErPdBi 






. T = 4.3K 
o T = 4.5K 
, T=5K 






. r=6K 
. r=8K 




^^jj^lMMMM" * ^ * * A A A AAAAA^ 


. 7= 10 K 










5 2 4 6 ? 


5 



50 100 150 200 250 300 

r[K] 



nh{T) = -NkBTln2 



(3) 



Based on these assumptions and approximations, p{T) 
can be defined as as 



nopo + PphjT) 
n{T) 



(4) 



In this formula pphiT) represents the phonon contri- 
bution to the resistivity, which is further assumed to be 
Pph{T) = AT for temperatures above Od/IO, where On 
is the Debye temperature (see also Ref.20i). 

As is seen in Fig. 3, above ~25 K, the above model 
provides a quite satisfactory description of the electri- 
cal resistivity of all of the compounds studied (see solid 
lines in Fig. 3). The obtained parameters are collected 
in Table II. As may be seen, the number of carriers no as 
well as the parameters characterizing the bands and the 
gap {N and Eg) nicely reflect the differences between the 
compounds studied as regards the character and magni- 
tude of their electrical conductivity. 

For ErPdBi a pronounced drop in p{T) at about 
7 K is observed. This behavior is very similar to that 
previously observed in the i?PdSb system, especially 
for ErPdSb (see Refs.6.20.23). As can be inferred 
from the inset to Fig. 3a, the anomaly in p{T) can 
be suppressed by magnetic field, in a manner typical 
for superconductivity. However, neither ErPdBi nor 
ErPdSb are bulk superconductors, as no corresponding 
features are observed in their magnetic and heat capacity 
data (see Ref. [23| for a more detailed discussion of this 
issue). Thus, the origin of the unusual low-temperature 
behavior of the resistivity of ErPdBi is unknown. Sim- 
ilarly, at the present stage we cannot reliably interpret 
the anomalous feature seen in p{T) of YPdBi, i.e. an 
increase of the resistivity below 19 K. 

As the thermopower is a sensitive probe of energy rel- 
ative to the Fermi level, it can be used as a tool to char- 
acterize the electronic structure, especially in the vicin- 
ity of the narrow gap or pseudogap. Fig. 4 shows the 



(b) 



a 




150 200 



300 



T[K] 



FIG. 3: (color online) Temperature dependencies of the elec- 
trical resistivity of i?PdBi compounds. The solid lines are 
the fits of eqH] to the experimental data (see text). Inset: 
magnetoresistivity isotherms vs. field taken for ErPdBi. 



temperature dependencies of the Seebeck coefficient of 
the i?PdBi series. The magnetic phase transitions in 
these compounds manifest themselves as tiny anoma- 
lies in S{T), better seen on the temperature derivative 
dS/dT (as an example see in the inset in Fig. 4 the be- 
havior of GdPdBi). In general, the overall magnitude and 
the temperature variations of the thermopower of i?PdBi 
are characteristic of low carrier density semimetals^i — . 
At 300 K, the thermoelectric power is as large as about 
40-90 /iV/K, which corresponds within a single band 
model to the effective carrier concentration of the order of 
10^^ cm~^. For all the compounds studied the Seebeck 
coefficient is positive in the entire temperature range, 
thus suggesting that holes may dominate the electrical 
and heat transport. However, strongly curvilinear char- 
acter of S{T) hints at the presence of complex electronic 
structure in the vicinity of the Fermi energy. Indeed, the 
most recent theoretical calculations have revealed a fairly 
complex electronic structure in YPdBi (Ref. 13) and in 
other RTX systems, with electron and hole bands close 
to the Fermi energy. 



4 



(a) 120 




A DyPdBi 
• ErPdBi 
T GdPdBi 
-♦- NdPdBi 
-■- HoPdBi 
— ^ YPdBi 



150 200 250 



300 



T[K] 



FIG. 4: (color online) Temperature dependencies of the ther- 
moelectric power of i?PdBi compounds. The solid lines rep- 
resent least-square fits of the two band model (eq|5]) to the 
experimental data (see text). Inset shows S(T) and dS/dT of 
GdPdBi in the vicinity of the magnetic phase transition. 



To account for this complexity, the temperature de- 
pendencies of the thermoelectric power of the i?PdBi 
compounds were analyzed in terms of a phenomenologi- 
cal model, which describes scattering of carriers on two 
quasiparticle bands laying close to the Fermi leveL^^ In 
this approach, it is assumed that the conduction elec- 
trons are scattered independently on a narrow N and a 
wide W bands approximated by Lorentzians. The ther- 
moelectric power in such a system can be expressed by a 
modified Mott's formula^i 



S{T) = SNiT) + Sw{T) = 



CLwT 



2^2 



. 7^2 



where 



and 



2A 



I? 



3A2 



(5) 



(6) 



(7) 



In the above equations, /S.n,w represents the positions 
of the Lorenzians with relation to the Fermi energy, while 



^N,w stands for their width. As shown by the solid lines 
in Fig. 4 the above model provides a good description of 
the experimental data of i?PdBi. The so-obtained pa- 
rameters, /S.N,w and Vn,Wi are listed in Table II. 

The relatively large values of the Seebeck coefficient 
at room temperature together with rather small electri- 
cal resistivity found for the i?PdBi materials yield quite 
enhanced magnitude of the thermoelectric power factor 
PF = S'^/p^ ranging from 6.3 /iWcm~^K~^ for YPdBi 
to 20.3 /iWcm-^K-^ for DyPdBi. These values are much 
larger than the ones obtained for i?PdSb compounds^- 
and comparable with PF ~20-25 /iWcm~^K~^ derived 
for the (Zr,Hf)NiSn system doped by Ta or Nd^. It 
is worth emphasizing that a large value of the power 
factor is the main prerequisite for good thermoelectri- 
cal efficiency, yet thermal conductivity studies are indis- 
pensable to fully characterize the thermoelectric poten- 
tial of a given material. The performance of thermo- 
electric devices is quantified by a dimensionless figure of 
merit ZT = S'^ / pn^ where S is the Seebeck coefficient, p 
is the electrical resistivity, and n stands for the thermal 
conductivity. Such measurements would be needed espe- 
cially for DyPdBi which seems to be the most promising 
in terms of thermoelectric performance usefulness for ap- 
plications. It is worth noting that in the case of ErPdBi 
the relatively low thermal conductivity results in figure of 
merit of approximately 0.08 at 500 K^. This value of ZT 
is similar to those found for doped 3(i-electron transition 
metal-based half-Heusler phases (see Refs l28ll3Ql ). 

The temperature dependence of the Hall coefficient of 
ErPdBi is shown in Fig. 5a. The positive sign of Rh 
throughout the entire temperature range indicates that 
holes dominate the electrical and heat transport. This is 
fully consistent with the positive sign of the Seebeck co- 
efficient observed in this compound. As shown in Fig. 5b 
and in the inset to Fig. 5a, Rh exhibits strong temper- 
ature and magnetic field dependencies. This finding fur- 
ther supports the conjecture on the complex electronic 
structure in ErPdBi, where the electron and hole bands 
have temperature and magnetic field dependent carrier 
concentrations and mobilities. At the lowest tempera- 
ture, the Hall coefficient is about 0.93 x 10~^ m?/C. 
It is almost three times smaller than that found in the 
narrow band semiconductor ErPdSb (Ref. i6|) but still 
10^-10^ times larger than Rh observed in simple metals. 
Within the single band model one may estimate the car- 
rier concentration uh and the Hall mobility pn to be of 
the order of 10^^ cm~^ and 100 cm^V~^s~^, respectively. 
These values were found to be strongly temperature de- 
pendent (not shown). The value of uh-, due to the crude 
approximation that neglects semimetallic character of the 
compound, can be considered as an upper limit of the 
real concentration in this material. It is about an order 
of magnitude smaller than the one derived from the ther- 
moelectric data, yet close to uh reported for semimetal- 
lic compounds MNiSn (M = Hf, Zr, Ti)^iH. In turn, 
the estimated mobility is much lower [r^ 8 times) than 
the bulk mobility obtained for the topological insulator 



5 



TABLE I: Transport parameters for i?PdBi (R = Er, Ho, Dy, Gd, Nd and Y). no - number of carriers at T = K, po - residual 
resistivity, N - density of states, psooK - resistivity measured at T = 300 K, S300K - thermopower measured at T = 300 K, 
Eg - energy gap, An,w and rN,w - position of the narrow and wide bands with relation to the Fermi energy and their width 
(see text). 



Compound 


no 


N 


PSOOK 


Eg S3OOK 

[meV] [/iV/K] 


Aiv 


Tn 


Aw 


Tw 






[eV-^] 


[pQcm] 


[meV] 


[meV] 


[meV] 


[meV] 


ErPdBi 


0.07 


5.96 


900 


94 


80 


0.45 


5.1 


32 


52 


HoPdBi 


0.17 


8.01 


234 


32 


50 


0.12 


5.5 


110 


130 


DyPdBi 


0.16 


24.5 


422 


35 


92 


0.65 


8.1 


34 


47 


YPdBi 


0.27 


7.85 


293 


44.5 


44 


0.15 


7.1 


72 


126 


GdPdBi 


0.13 


8.1 


533 


43 


79 


0.65 


5.8 


44 


65 


NdPdBi 


0.12 


9.65 


442 


34.5 


69 


0.35 


6.6 


55 


79 



Bi2Te3^. It is also worth to mention that for the latter 
compound the surface mobility reaches as large magni- 
tude as 10000 cm^V-^s-^ (see Ref. 




T[K] 



FIG. 5: (color online) (a) Temperature dependence of the Hall 
coefficient of ErPdBi. Inset: Rh{B) curves obtained at 2.5 
and 15 K. (b) Low temperature dependence of Rh measured 
in several different magnetic fields. 



IV. SUMMARY AND CONCLUSIONS 

The bismuthides i?PdBi {R = Er, Ho, Gd, Y, Dy, Nd) 
crystalize in the cubic MgAgAs-type structure. These 
compounds, except diamagnetic YPdBi, exhibit localized 
magnetism due to R^^ ions. Most of them order anti- 
ferromagnetically at low temperatures. All the samples 
studied showed the electrical conductivity reminiscent of 
semimetals or narrow gap semiconductors. Their thermo- 
electric power behaves in a manner typical for semimetals 
with holes as majority carriers. Moreover, for ErPdBi, 
the Hall effect study revealed a complex electronic struc- 
ture with multiple electron and hole bands and different 
temperature and magnetic field variations of the carrier 
concentrations and their mobilities. 

The results obtained for the i?PdBi compounds seem 
to be fully compatible with the theoretical predictions 
for topological insulators J^ii^ In particular, a non-trivial 
zero-gap semiconducting state has been postulated for 
YPdBi, with relatively small topological band inversion 
strength, whereas a narrow-gap semiconducting state has 
been predicted for YPdSb (Ref. [11). These theoreti- 
cal results agree well with the experimental data, pre- 
sented in this work and in Ref. [6|. It is worth noting that 
YPdBi (maybe also some other i?PdBi compounds) is lo- 
cated very close to the inversion transition^^, and hence it 
should be relatively easy to lift the degeneracy and open 
an inverted gap up at the Fermi level by small distortion 
of the cubic structure via alloying or external pressure. 
This intriguing hypothesis should motivate further stud- 
ies in the field. In the latter context, one should stress 
that even though the i?PdBi phases exhibit significant 
bulk carrier densities, the existence of topological state in 
these compounds cannot be ruled out. Hitherto studied 
materials such as Bi2Se3 or Bii-^^Sb^^ have been predicted 
to be topological insulators only if they are perfectly crys- 
talline. Real samples always have impurities and defects 
causing them to be not truly insulating, but to possess a 
finite bulk carrier density. Even materials which display 
a bulk insulating state, in surface sensitive experiments 
such as STM or ARPES, still show finite bulk carrier 
density in transport measurements^^'^^. Clearly, more 
investigations in this research field are required on well- 



6 



defined samples with tlie liigiiest quality, involving wide 
range of different experimental techniques. 

Last but not least, all the i?PdBi compounds studied, 
and especially DyPdBi, exhibit the large power factor 
coefficients PF = 6-20 /iWcm~^K~^. This result should 
motivate further work towards determining their figure of 
merit coefficient ZT, which measures the thermoelectric 
efficiency in real applications. 



Acknowledgments 



We are indebted to U. Burkhardt and H. Borrmann for 
metallographic and x-ray powder analysis of the samples. 
We thank T. Durakiewicz and J. Lashley for valuable 
discussion. 



* Electronic address: jgofryk@lanl.gov| 

^ P.J. Webster and K.R.A. Ziebeck, J. Phys. Chem. Solids 

34, 1647 (1973). 
^ C. Felser, G.H. Fecher, and B. Balke, Angew. Chem. Int. 

Ed. 46, 668 (2007). 
^ R.A. de Groot, P.M. Mueller, PG. Engen and K.H.J. 

Bushow, Phys. Rev. Lett 50, 2024 (1983). 
^ C. Uher, J. Yang, S. Hu, D. T. Morelli, and G. P. Meisner, 

Phys. Rev. B 59, 8615 (1999). 
^ H. C. Kandpal, C. Felser, and R. Seshadri, J. Phys. D: 

Appl. Phys. 39, 776 (2006). 
^ K. Gofryk, D. Kaczorowski, T. Plackowski, J. Mucha, A. 

Leithe- Jasper, W. Schnelle, and Yu. Grin, Phys. Rev. B 

75, 224426 (2007). 
^ J. Pierre and I. Karla, J. Magn. Magn. Mater. 217, 74 

(2000). 

^ I. Karla, J. Pierre, and R. V. Skolozdra, J. Alloys Compd. 

265, 42 (1998). 
^ P. C. Canfield, J. D. Thompson, W. P. Beyermann, A. 

Lacerda, M. F. Hundley, E. Petersen, and Z. Fisk, J. Appl. 

Phys. 70, 5800 (1991). 
^° M. F. Hundley J. D. Thompson, P. C. Canfield, and Z. 

Fisk, Phys. Rev. B 56, 8098 (1997). 

D. Kaczorowski, A. Leithe- Jasper, P. Rogl, H. Flandorfer, 
T. Cichorek, R. Pietri, and B. Andraka, Phys. Rev. B 60, 
422 (1999). 

J. Pierre, R.V. Skolozdra, J. Tobola, C. Hordequin, M.A. 
Kouacou, I. Karla, R. Currat and E. Lelievere-Berna, 
J.Alloys Compq. 262-263, 101 (1997). 
^3 S. Chadov, X. Qi, J. Kiibler, G. G. Fecher, C. Felser and 
S. C. Zhang, Nature Mater. 9, 541 (2010). 
H. Lin, L. A. Wray Y. Xia, S. Xu, S. Jia, R. J. Cava, A. 
Bansil and M. Z. Hasan, Nature Mater. 9, 546 (2010). 
Liang Fu and C. L. Kane, Phys. Rev. B 76, 045302 (2007). 
X-L. Qi, T. L. Hughes, and S-C. Zhang, Phys. Rev. B 78, 
195424 (2008). 

Liang Fu and C. L. Kane, Phys. Rev. Lett. 100, 096407 

(2008) . 

X-L. Qi, R. Zhang, and S-C. Zhang, Science 323, 1184 

(2009) . 

M. G. Haase, T. Schmidt, C. G. Richter, H. Block, and W. 



Jeitschko, J. Solid State Chem. 168, 18 (2002). 
K. Gofryk, D. Kaczorowski, T. Plackowski, A. Leit he- 
Jasper, and Yu. Grin, Phys. Rev. B 72, 094409 (2005). 
R. Dornhaus, G. Nimitz, and B. Schlicht, Narrow-Gap 
Semiconductors (Springer, Berlin, 1983). 
St. Berger. Ch. Paul, H. Michor, E. Bauer, G. Hilscher, A. 
Grytsiv and P. Rogl, 2002 IEEE, p.48, 21^* International 
Conference on Thermoelectronics (2002). 
D. Kaczorowski, K. Gofryk, T. Plackowski, A. Leit he- 
Jasper, and Yu. Grin, J. Magn. Magn. Mater. 290-291, 
573 (2005). 

K. Durczewski and M. Ausloos, Z. Phys. B: Condens. Mat- 
ter 85, 59 (1991). 
2^ F. G. Aliev, N. B. Brandt, V. V. Moshchalkov, V. V. 

Kozyrkov, R. V. Skolozdra, and A. I. Belogorokhov, Z. 

Phys. B 75, 167 (1989). 
2^ F. G. Aliev, V.V. Kozyrkov, V. V. Moshchalkov, R. V. 

Scolozdra, and K. Durczewski, Z. Phys. B 80, 353 (1990). 

Y. Bando, T. Suemitsu, K. Takagi, H. Tokushima, Y. 

Echizen, K. Katoh, K. Umeo, Y. Maeda, T. Takabatake, 

J. Alloys Comp. 313, 1 (2000). 

H. Hohl, A. P. Ramirez, C. Goldmann, G. Ernst, B. 
Wolfng, and E. Bucher, J. Phys.: Condens. Matter 11, 
1697 (1999). 

T. Sekimoto, K. Kurosaki, H. Muta, and S. Yamanaka, J. 
Appl. Phys. 99, 10370 (2006). 

Q. Shen, L. Chen, T. Goto, T. Hirai, J. Yang, G. P. Meis- 
ner, and C. Uher, Appl. Phys. Lett. 79, 4165 (2001). 

2^ F. G. Aliev, V. V. Moshchalkov, V. V. Kozyrkov, M. K. 
Zalyalyutdinov, V. V. Pryadun and R. V. Skolozdra, J. 
Magn. Magn. Mater. 76, 295 (1988). 

22 F. G. Aliev, Physica B 171, 199 (1991). 

22 D-X Qu, Y. S. Hor, Jun Xiong, R. J. Cava, and N. P. Ong, 
Science 329, 821 (2010). 

24 Analytis J. G., J. H. Chu, Y. L. Chen, F. Corredor, R. D. 
McDonald, Z. X. Shen, and I. R. Fisher, Phys. Rev. B, 81, 
205407 (2010). 

2^ Analytis J. G., R. D. McDonald, S. C. Riggs, J. H. Chu, 
G. S. Boebinger, and I. R. Fisher, Nature Physics 6, 960 
(2010).