Skip to main content

Full text of "USPTO Patents Application 10581639"

See other formats


(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) 



(19) World Intellectual Property 
Organization 

International Bureau 

(43) International Publication Date 
30 June 2005 (30.06.2005) 




PCT 



(10) International Publication Number 

WO 2005/059989 Al 



(51) International Patent Classification 7 : H01L 21/331 

(21) International Application Number: 

PCT/IB2004/052742 

(22) International Filing Date: 9 December 2004 (09.12.2004) 

(25) Filing Language: English 

(26) Publication Language: English 



(30) Priority Data: 

60/529,028 



12 December 2003 (12.12.2003) US 



(71) Applicant (for all designated States except US): KONIN- 
KLUKE PHILIPS ELECTRONICS, N.V. [NL/NL]; 
Groenewoudseweg 1, NL-5621 BA Eindhoven (NL). 

(71) Applicant (for AE only): U.S. PHILIPS CORPORA- 
TION [US/US]; 1251 Avenue of the Americas, New York, 
New York 10020 (US). 

(72) Inventors; and 

(75) Inventors/Applicants (for US only): DONKERS, Jo- 
hannes J.T.M. [NL/NL]; Groenewoudseweg 1, NL-5621 
BA Eindhoven (NL). MAGNEE, Petrus, H., C. [NL/BE]; 
Groenewoudseweg 1, NL-5621 BA Eindhoven (NL). 
KUNNEN, Eddy [BE/NL]; Groenewoudseweg 1, 
NL-5621 BA Eindhoven (NL). NEUILLY, Francois, I. 
[FR/BE]; Groenewoudseweg 1, NL-5621 BA Eindhoven 
(NL). 



(74) Common Representative: KONINKLIJKE PHILIPS 
ELECTRONICS, N.V.; c/o Waxier, Aaron P.O. Box 3001, 
Briarcliff Manor, NY 10510-8001 (US). 

(81) Designated States (unless otherwise indicated, for every 
kind of national protection available): AE, AG, AL, AM, 
AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, 
CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, 
GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, 
KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, 
MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, 
PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, 
TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, 
ZW. 

(84) Designated States (unless otherwise indicated, for every 
kind of regional protection available): ARIPO (BW, GH, 
GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, 
ZW), Eurasian (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), 
European (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, 
FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, 
SE, SI, SK, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, 
GQ, GW, ML, MR, NE, SN, TD, TG). 

Declarations under Rule 4.17: 

ā€” as to applicants entitlement to apply for and be granted 
a patent (Rule 4.17(H)) for the following designations AE, 
AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, 
CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, 
EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, 
JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, 

[ Continued on next page ] 



(54) Title: METHOD TO REDUCE SEEDLAYER TOPOGRAPHY IN BICMOS PROCESS 



ON 
00 
ON 
ON 




IT) 



(57) Abstract: A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a 
structure having a field isolation oxide region (12) adjacent to an active silicon region (10); forming a silicon nitride/silicon stack 
(14, 16) above the field isolation oxide region (12), wherein the silicon nitride/silicon stack (14, 16) includes a top layer of silicon 
(14) and a bottom layer of silicon nitride (16); performing an etch to the silicon nitride/silicon stack (14, 16) to form a stepped seed 
layer, wherein the top layer of silicon is etched laterally at the same time the bottom layer of silicon nitride is etched; and growing 
an Si/SiGe/Si stack (20) over the stepped seed layer and active region (10). 



WO 2005/059989 Al I II III lĀ« 



MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, 
PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, 
TM, TN, TR, IT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, 
ZW, ARIPO patent (BW, GH, GM, KE, LS, MW, MZ, NA, 
SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian patent (AM, AZ, 
BY, KG, KZ, MD, RU, TJ, TM), European patent (AT, BE, 
BG, CH, CY, CZ, DE, DK, EE, ES, Fl, FR, GB, GR, HU, 
IE, IS, IT, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR), 
OAPI patent (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, 
ML, MR, NE, SN, TD, TG) 



ā€” as to the applicant's entitlement to claim the priority of the 
earlier application (Rule 4.17( Hi)) for all designations 

Published: 

ā€” with international search report 

For two -letter codes and other abbreviations, refer to the "Guid- 
ance Notes on Codes and Abbreviations" appearing at the begin- 
ning of each regular issue of the PCT Gazette.